onsemi NTF6P02T3G

onsemi · FETs & Power MOSFETs · MPN NTF6P02T3G

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage20V
Output Capacitance(Coss)500pF
Current - Continuous Drain(Id)10A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation8.3W
Reverse Transfer Capacitance (Crss@Vds)150pF
RDS(on)44mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.2nF
TypeP-Channel

Technical details

P-Channel 20V 10A 8.3W Surface Mount SOT-223

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