onsemi · FETs & Power MOSFETs · MPN NTE4153NT1G
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| Gate Charge(Qg) | 1.82nC |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 915mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 12pF |
| RDS(on) | 127mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 110pF |
20V 915mA 450mV 127mΩ@4.5V 1 N-channel SC-89 Single FETs, MOSFETs RoHS