onsemi · FETs & Power MOSFETs · MPN NTDV20N06LT4G-VF01
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 1.88W |
| RDS(on) | 46mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.015nF |
60V 20A 4V 1.88W 46mΩ@10V 1 N-channel DPAK-3 Single FETs, MOSFETs RoHS