onsemi · FETs & Power MOSFETs · MPN NTDV20N06LT4G
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 32nC@5V |
| Output Capacitance(Coss) | 320pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 60W |
| Reverse Transfer Capacitance (Crss@Vds) | 105pF |
| RDS(on) | 48mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 990pF |
| Type | N-Channel |
60V 20A 2V 60W 48mΩ@5V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS