onsemi · FETs & Power MOSFETs · MPN NTD6416ANLT4G
No reviews yet — be the first to review onsemi NTD6416ANLT4G.
| Configuration | - |
|---|---|
| Gate Charge(Qg) | 40nC@10V |
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 110pF |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 71W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 74mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
100V 19A 2.2V 71W 74mΩ@10V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS