onsemi · FETs & Power MOSFETs · MPN NTD6415ANLT4G
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 156pF |
| Current - Continuous Drain(Id) | 23A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 83W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 56mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.024nF |
| Type | N-Channel |
100V 23A 2V 83W 56mΩ 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS