onsemi · FETs & Power MOSFETs · MPN NTD5802NT4G
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | - |
| Drain to Source Voltage | 40V |
| Output Capacitance(Coss) | 850pF |
| Current - Continuous Drain(Id) | 101A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 7.8mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 5.3nF |
40V 101A 3.5V 7.8mΩ@5V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS