onsemi · FETs & Power MOSFETs · MPN NTD4979N-35G
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| Gate Charge(Qg) | 9nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 41A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 26.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 6.9mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 837pF |
30V 41A 1.8V 26.3W 6.9mΩ@10V 1 N-channel IPAK Single FETs, MOSFETs RoHS