onsemi · FETs & Power MOSFETs · MPN NTD4965N-1G
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 28.2nC@10V |
| Output Capacitance(Coss) | 664pF |
| Current - Continuous Drain(Id) | 68A |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 38.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 340pF |
| RDS(on) | 10mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.71nF |
| Type | N-Channel |
30V 68A 2.5V 38.5W 10mΩ@4.5V 1 N-channel N-Channel IPAK Single FETs, MOSFETs RoHS