onsemi NTD4860NT4G

onsemi · FETs & Power MOSFETs · MPN NTD4860NT4G

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Specifications

Gate Charge(Qg)21.8nC@10V
Drain to Source Voltage25V
Current - Continuous Drain(Id)65A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation50W
Reverse Transfer Capacitance (Crss@Vds)169pF
RDS(on)11.1mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.308nF
TypeN-Channel

Technical details

N-Channel 25V 65A 50W Surface Mount DPAK

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