onsemi · FETs & Power MOSFETs · MPN NTD4860NT4G
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| Gate Charge(Qg) | 21.8nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 65A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 50W |
| Reverse Transfer Capacitance (Crss@Vds) | 169pF |
| RDS(on) | 11.1mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.308nF |
| Type | N-Channel |
N-Channel 25V 65A 50W Surface Mount DPAK