onsemi · FETs & Power MOSFETs · MPN NTD4858N-35G
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| Gate Charge(Qg) | 25.7nC@10V |
|---|---|
| Drain to Source Voltage | 25V |
| Current - Continuous Drain(Id) | 73A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 54.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| RDS(on) | 6.2mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.563nF |
25V 73A 2.5V 54.5W 6.2mΩ@10V 1 N-channel IPAK Single FETs, MOSFETs RoHS