onsemi NTD4813NHT4G

onsemi · FETs & Power MOSFETs · MPN NTD4813NHT4G

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Specifications

Gate Charge(Qg)7.1nC@4.5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)40A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation35.3W
Reverse Transfer Capacitance (Crss@Vds)115pF
RDS(on)18.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)940pF

Technical details

30V 40A 2.5V 35.3W 18.5mΩ@4.5V 1 N-channel DPAK Single FETs, MOSFETs RoHS

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