onsemi · FETs & Power MOSFETs · MPN NTD360N80S3Z
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| Gate Charge(Qg) | 25.3nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.8V |
| Pd - Power Dissipation | 96W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.143nF |
N-Channel 800V 13A 96W Surface Mount TO-252