onsemi NTD30N02T4G

onsemi · FETs & Power MOSFETs · MPN NTD30N02T4G

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Specifications

Gate Charge(Qg)20nC@4.5V
Drain to Source Voltage24V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)175pF
RDS(on)14.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1nF
TypeN-Channel

Technical details

24V 30A 3V 75W 14.5mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS

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