onsemi · FETs & Power MOSFETs · MPN NTD30N02T4G
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| Gate Charge(Qg) | 20nC@4.5V |
|---|---|
| Drain to Source Voltage | 24V |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 75W |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF |
| RDS(on) | 14.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1nF |
| Type | N-Channel |
24V 30A 3V 75W 14.5mΩ@10V 1 N-channel N-Channel DPAK Single FETs, MOSFETs RoHS