onsemi NTD3055L170T4G

onsemi · FETs & Power MOSFETs · MPN NTD3055L170T4G

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Specifications

Gate Charge(Qg)4.7nC@5V
Drain to Source Voltage60V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation28.5W
Reverse Transfer Capacitance (Crss@Vds)42pF
RDS(on)170mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)275pF
TypeN-Channel

Technical details

N-Channel 60V 9A 28.5W Surface Mount DPAK

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