onsemi NTD3055L104-1G

onsemi · FETs & Power MOSFETs · MPN NTD3055L104-1G

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Specifications

Gate Charge(Qg)20nC@5V
Drain to Source Voltage60V
Output Capacitance(Coss)440pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)105pF
RDS(on)104mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)316pF
TypeN-Channel

Technical details

60V 12A 2V 48W 104mΩ@5V 1 N-channel N-Channel TO-251(IPAK) Single FETs, MOSFETs RoHS

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