onsemi NTD3055-150T4G

onsemi · FETs & Power MOSFETs · MPN NTD3055-150T4G

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)100pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation28.8W
Reverse Transfer Capacitance (Crss@Vds)40pF
RDS(on)150mΩ
Number1 N-channel
Input Capacitance(Ciss)280pF
TypeN-Channel

Technical details

N-Channel 60V 9A 28.8W Surface Mount DPAK

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