onsemi NTD2955T4G

onsemi · FETs & Power MOSFETs · MPN NTD2955T4G

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage60V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation55W
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)180mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)750pF
TypeP-Channel

Technical details

P-Channel 60V 12A 55W Surface Mount DPAK

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