onsemi · FETs & Power MOSFETs · MPN NTD2955-1G
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| Gate Charge(Qg) | 30nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 250pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 750pF |
| Type | P-Channel |
60V 12A 4V 55W 180mΩ@10V 1 P-Channel P-Channel TO-251(IPAK) Single FETs, MOSFETs RoHS