onsemi · FETs & Power MOSFETs · MPN NTD20N03L27T4G
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| Gate Charge(Qg) | 18.9nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 1.75W;74W |
| RDS(on) | 27mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.26nF |
30V 20A 27mΩ@5V 1 N-channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS