onsemi · FETs & Power MOSFETs · MPN NTD18N06LT4G
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| Gate Charge(Qg) | 22nC@5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 230pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 55W |
| Reverse Transfer Capacitance (Crss@Vds) | 80pF |
| RDS(on) | 65mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 675pF |
| Type | N-Channel |
60V 18A 2V 55W 65mΩ@5V 1 N-channel N-Channel TO-252-2(DPAK) Single FETs, MOSFETs RoHS