onsemi · FETs & Power MOSFETs · MPN NTD14N03RT4G
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| Drain to Source Voltage | 25V |
|---|---|
| Gate Charge(Qg) | 1.8nC@10V |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 20.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF |
| RDS(on) | 130mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 115pF |
| Type | N-Channel |
25V 14A 2V 20.8W 130mΩ@4.5V 1 N-channel N-Channel DPAK-3 Single FETs, MOSFETs RoHS