onsemi · FETs & Power MOSFETs · MPN NTBS9D0N10MC
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| Gate Charge(Qg) | 23nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 14A;60A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 3.8W;68W |
| Reverse Transfer Capacitance (Crss@Vds) | 13pF |
| RDS(on) | 7.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.695nF |
N-Channel 100V 14A 60A 3.8W 68W Surface Mount D2PAK