onsemi NTBLS1D7N08H

onsemi · FETs & Power MOSFETs · MPN NTBLS1D7N08H

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Specifications

Gate Charge(Qg)121nC@10V
Drain to Source Voltage80V
Output Capacitance(Coss)1.059nF
Current - Continuous Drain(Id)203A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation167W
Reverse Transfer Capacitance (Crss@Vds)41pF
RDS(on)1.7mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)7.675nF
TypeN-Channel

Technical details

N-Channel 80V 203A 167W H-PSOF-8L

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