onsemi · FETs & Power MOSFETs · MPN NTBLS1D5N08MC
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| Gate Charge(Qg) | 111nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 298A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 250W |
| Reverse Transfer Capacitance (Crss@Vds) | 82pF |
| RDS(on) | 1.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 8.17nF |
80V 298A 3V 250W 1.3mΩ@10V 1 N-channel MO-299A Single FETs, MOSFETs RoHS