onsemi · FETs & Power MOSFETs · MPN NTBLS1D1N08H
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| Gate Charge(Qg) | 166nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Current - Continuous Drain(Id) | 351A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 49pF |
| RDS(on) | 0.92mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.2nF |
80V 351A 2V 0.92mΩ@10V 1 N-channel MO-299A Single FETs, MOSFETs RoHS