onsemi NTBLS0D7N06C

onsemi · FETs & Power MOSFETs · MPN NTBLS0D7N06C

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Specifications

Gate Charge(Qg)170nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)470A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation314W
Reverse Transfer Capacitance (Crss@Vds)92pF
RDS(on)0.56mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)13.73nF

Technical details

60V 470A 2.8V 314W 0.56mΩ@10V 1 N-channel H-PSOF-8L Single FETs, MOSFETs RoHS

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