onsemi · FETs & Power MOSFETs · MPN NTBLS001N06C
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| Gate Charge(Qg) | 52nC@6V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 422A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 284W |
| Reverse Transfer Capacitance (Crss@Vds) | 76pF |
| RDS(on) | 0.75mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 11.575nF |
60V 422A 2.8V 284W 0.75mΩ@10V 1 N-channel MO-299A Single FETs, MOSFETs RoHS