onsemi · FETs & Power MOSFETs · MPN NTBGS4D1N15MC
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| Gate Charge(Qg) | 88.9nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Current - Continuous Drain(Id) | 20A;185A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.5V |
| Pd - Power Dissipation | 3.7W;316W |
| Reverse Transfer Capacitance (Crss@Vds) | 10.6pF |
| RDS(on) | 3.3mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.285nF |
150V 4.5V 3.3mΩ@10V 1 N-channel D2PAK-7 Single FETs, MOSFETs RoHS