onsemi · FETs & Power MOSFETs · MPN NTBGS3D5N06C
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 39nC@10V |
| Current - Continuous Drain(Id) | 127A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 115W |
| Reverse Transfer Capacitance (Crss@Vds) | 21pF |
| RDS(on) | 4.1mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.43nF |
| Type | N-Channel |
60V 127A 4V 115W 4.1mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS