onsemi · FETs & Power MOSFETs · MPN NTBGS1D5N06C
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| Gate Charge(Qg) | 78.6nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 3.06nF |
| Current - Continuous Drain(Id) | 267A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 211W |
| Reverse Transfer Capacitance (Crss@Vds) | 66pF |
| RDS(on) | 1.62mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6.25nF |
| Type | N-Channel |
60V 267A 4V 211W 1.62mΩ@10V 1 N-channel N-Channel TO-263-7 Single FETs, MOSFETs RoHS