onsemi · FETs & Power MOSFETs · MPN NTBG1000N170M1
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| Drain to Source Voltage | 1.7kV |
|---|---|
| Gate Charge(Qg) | 14nC |
| Output Capacitance(Coss) | 11pF |
| Current - Continuous Drain(Id) | 4.3A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Pd - Power Dissipation | 51W |
| RDS(on) | 1.43Ω |
| Reverse Transfer Capacitance (Crss@Vds) | 0.6pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 150pF |
| Type | N-Channel |
1.7kV 4.3A 4.3V 51W 1.43Ω 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS