onsemi NTBG060N090SC1

onsemi · FETs & Power MOSFETs · MPN NTBG060N090SC1

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Specifications

Drain to Source Voltage900V
Gate Charge(Qg)88nC
Current - Continuous Drain(Id)44A
Output Capacitance(Coss)115pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.3V
Pd - Power Dissipation211W
RDS(on)84mΩ
Reverse Transfer Capacitance (Crss@Vds)12pF
Number1 N-channel
Input Capacitance(Ciss)1.8nF
TypeN-Channel

Technical details

900V 44A 4.3V 211W 84mΩ 1 N-channel N-Channel D2PAK-7 Single FETs, MOSFETs RoHS

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