onsemi NTBG028N170M1

onsemi · FETs & Power MOSFETs · MPN NTBG028N170M1

No reviews yet — be the first to review onsemi NTBG028N170M1.

Specifications

Gate Charge(Qg)222nC
Drain to Source Voltage1.7kV
Current - Continuous Drain(Id)71A
Output Capacitance(Coss)200pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.3V
Pd - Power Dissipation428W
RDS(on)40mΩ
Reverse Transfer Capacitance (Crss@Vds)15pF
Number1 N-channel
Input Capacitance(Ciss)4.16nF
TypeN-Channel

Technical details

1.7kV Surface Mount D2PAK7(TO-263-7L-HV)

Related FETs & Power MOSFETs