onsemi NTBG020N120SC1

onsemi · FETs & Power MOSFETs · MPN NTBG020N120SC1

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage1.2kV
Current - Continuous Drain(Id)8.6A;98A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4.3V
Pd - Power Dissipation3.7W;468W
Reverse Transfer Capacitance (Crss@Vds)24pF
RDS(on)20mΩ@20V
Number1 N-channel
Input Capacitance(Ciss)2.943nF

Technical details

1.2kV 4.3V 20mΩ@20V 1 N-channel TO-263-7 Single FETs, MOSFETs RoHS

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