onsemi · FETs & Power MOSFETs · MPN NTBG020N090SC1
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 900V |
| Current - Continuous Drain(Id) | 9.8A;112A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4.3V |
| Pd - Power Dissipation | 3.7W;477W |
| Reverse Transfer Capacitance (Crss@Vds) | 25pF |
| RDS(on) | 16mΩ@18V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.415nF |
900V 4.3V 16mΩ@18V 1 N-channel D2PAK-7 Single FETs, MOSFETs RoHS