onsemi · FETs & Power MOSFETs · MPN NTB6410ANT4G
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| Gate Charge(Qg) | 120nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 76A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 188W |
| Reverse Transfer Capacitance (Crss@Vds) | 250pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 4.5nF |
100V 76A 4V 188W 10mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS