onsemi · FETs & Power MOSFETs · MPN NTB5605PT4G
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| Gate Charge(Qg) | 22nC@5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 211pF |
| Current - Continuous Drain(Id) | 18.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 88W |
| Reverse Transfer Capacitance (Crss@Vds) | 67pF |
| RDS(on) | 140mΩ@5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 730pF |
| Type | P-Channel |
60V 18.5A 2V 88W 140mΩ@5V 1 P-Channel P-Channel TO-263-2 Single FETs, MOSFETs RoHS