onsemi · FETs & Power MOSFETs · MPN NTB45N06LT4G
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| Gate Charge(Qg) | 32nC@5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 45A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.8V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 28mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.7nF |
60V 45A 1.8V 125W 28mΩ@5V 1 N-channel D2PAK Single FETs, MOSFETs RoHS