onsemi · FETs & Power MOSFETs · MPN NTB35N15T4G
No reviews yet — be the first to review onsemi NTB35N15T4G.
| Gate Charge(Qg) | 100nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 650pF |
| Current - Continuous Drain(Id) | 37A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 178W |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF |
| RDS(on) | 50mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.2nF |
| Type | N-Channel |
150V 37A 4V 178W 50mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS