onsemi · FETs & Power MOSFETs · MPN NTB30N06
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| Gate Charge(Qg) | 46nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 27A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 88.2W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 42mΩ@10V |
| Input Capacitance(Ciss) | 1.2nF |
| Type | N-Channel |
60V 27A 4V 88.2W 42mΩ@10V N-Channel Single FETs, MOSFETs