onsemi · FETs & Power MOSFETs · MPN NTB25P06T4
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| Gate Charge(Qg) | 88nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 480pF |
| Current - Continuous Drain(Id) | 27.5A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 120W |
| Reverse Transfer Capacitance (Crss@Vds) | 180pF |
| RDS(on) | 82mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.68nF |
| Type | P-Channel |
60V 27.5A 4V 120W 82mΩ@10V 1 P-Channel P-Channel D2PAK Single FETs, MOSFETs