onsemi · FETs & Power MOSFETs · MPN NTB082N65S3F
No reviews yet — be the first to review onsemi NTB082N65S3F.
| Gate Charge(Qg) | 81nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 5V |
| Pd - Power Dissipation | 313W |
| Reverse Transfer Capacitance (Crss@Vds) | 32pF |
| RDS(on) | 70mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.41nF |
650V 40A 5V 313W 70mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS