onsemi NTA4151PT1G

onsemi · FETs & Power MOSFETs · MPN NTA4151PT1G

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Specifications

Gate Charge(Qg)2.1nC@4.5V
Drain to Source Voltage20V
Current - Continuous Drain(Id)760mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation301mW
RDS(on)360mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)156pF

Technical details

P-Channel 20V 760mA 301mW Surface Mount SC-75(SOT-416)

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