onsemi · Transistors (BJTs) · MPN NSVMUN5312DW1T3G
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 60 |
| Vce Saturation(VCE(sat)) | 250mV |
| type | NPN+PNP |
| Input Resistor | 22kΩ |
| Resistor Ratio | 1 |
| Number | 1 NPN Pre-Biased, 1 PNP Pre-Biased |
| Pd - Power Dissipation | 250mW |
| Input Voltage (VI(on)@Ic,Vce) | 2V@5mA,200mV |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
60 1 NPN Pre-Biased, 1 PNP Pre-Biased 250mW 100mA 50V SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS