onsemi · Transistors (BJTs) · MPN NSVMUN5215DW1T1G
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| DC Current Gain | 160 |
|---|---|
| Input Resistor | 10kΩ |
| Number | 2 NPN (Pre-Biased) |
| Pd - Power Dissipation | 187mW |
| Current - Collector(Ic) | 100mA |
| Collector - Emitter Voltage VCEO | 50V |
| Operating Temperature | -55℃~+150℃ |
160 2 NPN (Pre-Biased) 187mW 100mA 50V SC-88-6 Bipolar Transistor Arrays, Pre-Biased RoHS