onsemi NSVMMBT6429LT1G

onsemi · Transistors (BJTs) · MPN NSVMMBT6429LT1G

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Specifications

Current - Collector Cutoff10nA
Transition frequency(fT)700MHz
Collector - Emitter Voltage VCEO45V
Emitter-Base Voltage VEBO6V
DC Current Gain500
Pd - Power Dissipation225mW
Number1 NPN
typeNPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 45V 200mA 700MHz 225mW Surface Mount SOT-23

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