onsemi NSVF4015SG4T1G

onsemi · Transistors (BJTs) · MPN NSVF4015SG4T1G

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Specifications

Emitter-Base Voltage(Vebo)2V
Current - Collector Cutoff1uA
Collector - Emitter Voltage VCEO12V
DC Current Gain60
Pd - Power Dissipation450mW
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
ConfigurationCommon Emitter
Transition frequency(fT)10GHz
typeNPN
Vce Saturation(VCE(sat))-
Number1 NPN

Technical details

12V 60 450mW 100mA NPN SC-82FL Bipolar RF Transistors RoHS

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