onsemi · Transistors (BJTs) · MPN NSVF4015SG4T1G
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| Emitter-Base Voltage(Vebo) | 2V |
|---|---|
| Current - Collector Cutoff | 1uA |
| Collector - Emitter Voltage VCEO | 12V |
| DC Current Gain | 60 |
| Pd - Power Dissipation | 450mW |
| Operating Temperature | -55℃~+150℃ |
| Current - Collector(Ic) | 100mA |
| Configuration | Common Emitter |
| Transition frequency(fT) | 10GHz |
| type | NPN |
| Vce Saturation(VCE(sat)) | - |
| Number | 1 NPN |
12V 60 450mW 100mA NPN SC-82FL Bipolar RF Transistors RoHS