onsemi NSVBCP56MTWG

onsemi · Transistors (BJTs) · MPN NSVBCP56MTWG

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)140MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain250
Emitter-Base Voltage VEBO5V
Pd - Power Dissipation1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1A 140MHz 1.5W WDFNW-3(2x2)

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