onsemi NSVBCH817-40LT1G

onsemi · Transistors (BJTs) · MPN NSVBCH817-40LT1G

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO45V
DC Current Gain250
Pd - Power Dissipation225mW
typeNPN
Current - Collector(Ic)500mA
Vce Saturation(VCE(sat))700mV
Operating Temperature-55℃~+175℃

Technical details

45V 250 NPN 500mA SOT-23 Single Bipolar Transistors RoHS

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